- Schottky(-barrier) device
- прилад з бар’єром Шоткі (напр. діод Шоткі)
English-Ukrainian dictionary of microelectronics. 2013.
Schottky(-barrier) device
Смотреть что такое "Schottky(-barrier) device" в других словарях:
Schottky barrier — A Schottky barrier is a potential barrier formed at a metal semiconductor junction which has rectifying characteristics, suitable for use as a diode. The largest differences between a Schottky barrier and a p n junction are its typically lower… … Wikipedia
schottky barrier — noun Usage: usually capitalized S Etymology: Schottky defect : a potential barrier that exists at a metal semiconductor interface (as in a solid state electronic device) … Useful english dictionary
Schottky diode — The Schottky diode (named after German physicist Walter H. Schottky; also known as hot carrier diode) is a semiconductor diode with a low forward voltage drop and a very fast switching action.In the early days of wireless, cat s whisker detectors … Wikipedia
Heterostructure barrier varactor — diode The Heterostructure barrier varactor (HBV) diode was invented by Erik Kollberg together with Anders Rydberg in 1989 at Chalmers University of Technology. This semiconductor diode has an anti symmetric current voltage relationship and a… … Wikipedia
Thermionic emission — Closeup of the filament on a low pressure mercury gas discharge lamp showing white thermionic emission mix coating on the central portion of the coil. Typically made of a mixture of barium, strontium and calcium oxides, the coating is sputtered… … Wikipedia
Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… … Wikipedia
Spintronics — (a neologism meaning spin transport electronics [1][2]), also known as magnetoelectronics, is an emerging technology that exploits both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental… … Wikipedia
History of the transistor — Invention of the transistor= The first patent [patent|US|1745175|Julius Edgar Lilienfeld: Method and apparatus for controlling electric current first filed in Canada on 22.10.1925, describing a device similar to a MESFET] for the field effect… … Wikipedia
Cat's-whisker detector — Galena cat s whisker detector Precision cat s whisker d … Wikipedia
Mercury probe — The Mercury Probe is an electrical probing device to make rapid, non destructive contact to a sample for electrical characterization. Its primary application is semiconductor measurements where time consuming metallizations or photolithographic… … Wikipedia
N-type semiconductor — N type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in silicon). This creates an excess of negative (n type) electron charge… … Wikipedia
